High-speed, high-responsivity Ge photodiode with NiSi contacts for an advanced photonic BiCMOS technology

Stefan Lischke,D. Knoll,D. Wolansky,M. Kroh,A. Peczek,Lars Zimmermann

2017 IEEE 14th International Conference on Group IV Photonics (GFP)（2017）

Cited 5|Views43

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Abstract

We will show that contacting a high-performance Ge photodiode with NiSi instead of CoSi ₂ has no negative effect. This result strongly supports the development of an advanced photonic BiCMOS process where the RF performance of SiGe HBTs can take strong benefit from the “cold” NiSi.

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Key words

HBTs,high-speed high-responsivity germanium photodiode,high-performance germanium photodiode,RF performance,advanced photonic BiCMOS technology,NiSi contacts,NiSi,Ge,CoSi2,SiGe

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