Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods
Journal of Crystal Growth(2018)
摘要
•III-Nitride nanostructures grown using a modified droplet epitaxy technique.•AlN uniform vertical nano-rods formed with length/width 1 µm/250 nm.•Spontaneous growth of radial AlGaN double heterostructures observed by EDX imaging.•AlGaN PL peak at 260 nm reduces to 25% from 4 K to 300 K indicating high IQE.
更多查看译文
关键词
A1. Nanostructures,A3. Molecular beam epitaxy,A3. Migration enhanced epitaxy,B1. Nitrides
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要