Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

Chirantan Singha,Sayantani Sen,Pallabi Pramanik,Mainak Palit,Alakananda Das,Abhra Shankar Roy,Susanta Sen,Anirban Bhattacharyya

Journal of Crystal Growth（2018）

引用 6|浏览3

暂无评分

摘要

•III-Nitride nanostructures grown using a modified droplet epitaxy technique.•AlN uniform vertical nano-rods formed with length/width 1 µm/250 nm.•Spontaneous growth of radial AlGaN double heterostructures observed by EDX imaging.•AlGaN PL peak at 260 nm reduces to 25% from 4 K to 300 K indicating high IQE.

查看译文

关键词

A1. Nanostructures,A3. Molecular beam epitaxy,A3. Migration enhanced epitaxy,B1. Nitrides

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要