Ultra-High Sensitivity to Low Hydrogen Gas Concentration With Pd-Decorated IGZO Film

IEEE Electron Device Letters(2017)

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摘要
To enhance the performance of semiconducting metal oxides, as hydrogen (H2) sensor, we introduced a high carrier concentration (Nd) metal oxide, indium- gallium-zinc oxide (IGZO), combined with palladium (Pd) catalysis. This allowed the detection of low concentrations of H2 at room temperature. The base current level was linearly increased with the Pd thickness. As a result, a high sensor sensitiv...
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关键词
Sensitivity,Zinc oxide,II-VI semiconductor materials,Hydrogen,Gas detectors,Temperature sensors
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