Growth and characterization of n-AlGaN 1-D structures with varying Al composition using u-GaN seeds

•Vertically aligned various 1-D n-AlGaN nanostructures were grown by MOCVD.•Flow rate of TMGa critically controls the Al/Ga ratio in the final AlGaN structures.•LT-CL spectra showed a red shift in band edge emission with decreasing Al content.•1-D AlGaN nanostructures are suitable for photoconductive ultraviolet detectors.