TCAD simulation methodology for full 3-D electro-physical and advanced thermal analysis of power modules

High reliability and performance of power semiconductor devices depends on an optimized design based on a good understanding of their electro-thermal behavior and influence of parasitic components on their operation. In this paper we present the analysis and the geometry optimization of the high power PIN diode structure supported by the advanced full 3-D mixed mode electro-thermal device and circuit simulation. Lowering the operation temperature by better power management and heat dissipation related to optimized structure design will allow withstanding of higher current pulses and suppressing the damage of the analyzed structure by thermal breakdown. The structure under investigation is a P ⁺ NN ⁺ power diode packaged in power module. It is designed for reverse voltages up to 1800V and high forward currents up to 100 A with maximum forward surge current up to 2,7 kA