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MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

J. Grendysa,G. Tomaka,P. Sliz, C.R. Becker,M. Trzyna,R. Wojnarowska-Nowak,E. Bobko,E.M. Sheregii

Journal of Crystal Growth（2017）

Cited 1|Views8
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Abstract
•Producing by MBE technology of strong Topological Isolators based on HgCdTe.•Stress engineering of HgCdTe layers - 3D analogy of graphene.•The stress-free layer also shows the dominate conductivity on TPSS.
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Key words
A1.Stresses,A3. Molecular beam epitaxy,B1. Nanomaterials,B2. Topological insulator,B2. Semiconducting mercury compounds
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