Dependence Of Light Polarization On Electron Emission From Gated Silicon Field Emitter Arrays
2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC)(2017)
摘要
We report field emission properties of gated p-type silicon field emitter arrays with submicron gate aperture induced by laser pulses. Polarization dependent photoemission is observed and the current shows linear dependence on laser power. The results indicate that the current pulses from our devices are created by photo-field emission process dominantly.
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关键词
photoassisted field emission, silicon field emitter, beam modulation
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