Quantum anomalous Hall conductivity in 3D magnetic topological insulator/normal insulator heterostructures

V.V. Tugushev,V. N. Men’shov, I.A. Shvets,E. V. Chulkov

Journal of Magnetism and Magnetic Materials（2018）

引用 4|浏览10

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摘要

•An effective 2D Hamiltonian of the FMNI/TI/FMNI trilayer is derived.•The realization of QAHE depends on the TI film thickness and the interface potential.•The phase diagram of the trilayer contains the trivial, QSHE and QAHE regimes.

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关键词

Topological insulator,Quantum anomalous Hall effect,Interface states

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