Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Z.A. Yunusov,Sh. U. Yuldashev,Young Hae Kwon,Deuk Young Kim,Seung Joo Lee,Hee Chang Jeon,Hyun Jung,Aran Kim,T.W. Kang

Journal of Magnetism and Magnetic Materials（2018）

Cited 8|Views11

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Abstract

•The effect of the sulfur dopant concentration on the structural, optical and magnetic properties.•Band gap energy of the films decreases from 3.2eV to 2.96eV with increasing the sulfur dopant concentration.•The SQUID and Hall Effect measurements demonstrate the room temperature ferromagnetism in the sulfur doped ZnMnO thin films.

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Key words

Diluted magnetic semiconductors (DMS),ZnO,ZnS alloy,Room temperature ferromagnetism

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