Ultracompact ESD Protection With BIMOS-Merged Dual Back-to-Back SCR in Hybrid Bulk 28-nm FD-SOI Advanced CMOS Technology

The main purpose of this paper is to introduce an ultracompact device for electrostatic discharge (ESD) protection based on a bipolar metal oxide silicon (BIMOS) transistor merged with a dual back-to-back silicon-controlled rectifier (SCR) for bulk and for ultrathin body box fully depleted (FD)-silicon on insulator (SOI) advanced CMOS technologies in the hybrid bulk thanks to process co-integratio...