Will Ge and GeSn lasers enable Si photonics in the Mid-Infrared?

A. Chelnokov,N. Pauc,A. Gassenq,J. Aubin, Q. M. Thai, L. Milord,M. Bertrand,K. Guilloy, J. Rothman,T. Zabel,H. Sigg, J.M. Hartmann,V. Calvo,V. Reboud

2017 IEEE Photonics Society Summer Topical Meeting Series (SUM)（2017）

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摘要

For the near-infrared (near-IR) optical data communications, silicon photonics became a mature technology. Building on the technological developments associated with datacoms, silicon photonics now expands into the mid-infrared (mid-IR), mostly for the optical gas sensing. Here as well, the development is hampered by the absence of monolithically integrated laser sources compatible with the CMOS fab processing.

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关键词

mid-Infrared optical data communications,near-infrared optical data communications,datacoms,optical gas sensing,monolithically integrated laser sources,CMOS fab processing,GeSn,Ge

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