Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer
IEEE Transactions on Electron Devices(2017)
Abstract
Studies have been carried out on the enhancement of responsivity and detectivity of the ZnO thin-filmsbased ultraviolet photodetectors by introducing an AlN buffer layer on silicon substrate. The ZnO film grown with AlN buffer layer established an epitaxial relation with the substrate and was found to show improved crystallinitywith excellent optical properties. A strong and narrow photoluminescen...
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Key words
Zinc oxide,II-VI semiconductor materials,Photodetectors,Silicon,Aluminum nitride,III-V semiconductor materials,Buffer layers
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