Experimental study on an evaporation process to deposit MoO2 microflakes

Experimental study on one evaporation process of MoO2 precursor is reported here. Rhomboidal microflakes were deposited on SiO2/Si substrate, as-prepared samples had high crystallinity, the size lengths of which can excess 200μm and thicknesses were 20–100nm. A chemical mechanism based on disproportionation reaction has been suggested and verified primarily. The sulfuration result of these products to prepare MoS2 films was also studied. The fine crystallinity, low evaporation rate and conductive property of these MoO2 crystals make them potential precursor and substrate for growth of more 2D chalcogenides MoX2 (X=S, Se, Te).