Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes
2017 IEEE Photonics Conference (IPC)(2017)
Abstract
We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.
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Key words
individually addressable n-electrodes,microlight emitting diode array,common p-electrode,individual-addressed n-electrodes,microLED arrays,series-resistance difference,n-type metal-oxide-semiconductor transistor-based drivers,GaN
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