Development, performance and application of novel GaN-based micro-LED arrays with individually addressable n-electrodes

Enyuan Xie,Mark Stonehouse,Ricardo Ferreira,Jonathan J. D. McKendry,Johannes Herrnsdorf,Xiangyu He,Sujan Rajbhandari,Hyunchae Chun,Aravind V. N. Jalajakumari,Oscar Almer,Stefan Videv,Grahame Faulkner,Ian Watson,Erdan Gu,Robert Henderson,Dominic C. O'Brien,Harald Haas,Martin D. Dawson

2017 IEEE Photonics Conference (IPC)（2017）

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Abstract

We demonstrate the development, performance and application of a GaN-based micro-light emitting diode array sharing a common p-electrode with individual-addressed n-electrodes. These individually-addressed n-electrodes minimize the series-resistance difference from conductive paths, and offer compatibility with n-type metal-oxide-semiconductor transistor-based drivers for faster modulation.

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Key words

individually addressable n-electrodes,microlight emitting diode array,common p-electrode,individual-addressed n-electrodes,microLED arrays,series-resistance difference,n-type metal-oxide-semiconductor transistor-based drivers,GaN

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