Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices

Robert D. Richards,Alexander Mellor, F. Harun,Jeng Shiuh Cheong,Nicholas P. Hylton,Tom Wilson,Tomos Thomas,J. S. Roberts,Nicholas J. Ekins-Daukes,J. P. R. David

Solar Energy Materials and Solar Cells（2017）

引用 46|浏览28

暂无评分

摘要

A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess the potential of GaAsBi for photovoltaic applications. The devices are compared with strained and strain-balanced InGaAs based devices.

查看译文

关键词

GaAsBi,MQWs,Multijunction,IQE,InGaAs

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要