Numerical simulation of HTM-free and WOx based perovskite cells: Effects of interface conditions

Yong Huang,Sigalit Aharon,Alexandre Gheno,Sylvain Vedraine,L. Pedesseau, Jean-Philippe Burin,Olivier Durand,Johann Bouclé,Lioz Etgar,Jacky Even,Alain Rolland

2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)（2017）

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摘要

Hole transport material (HTM) free and WO _x based perovskite solar cells are theoretically investigated by using drift-diffusion and small signal models. The influence of interface states and leakage current is studied, and the current-voltage (J-V) and capacitance-voltage (C-V) characteristics are reproduced in reasonable agreement with experimental data, including build in potential (Vbi) variation, open circuit voltage (VOC) loss and hysteresis effects.

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关键词

HTM-free perovskite solar cells,hole transport material,interface conditions,drift-diffusion model,small signal model,interface states,leakage current,current-voltage characteristics,capacitance-voltage characteristics,build in potential variation,open circuit voltage loss,hysteresis effects,WO

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