Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators
2017 IEEE 67th Electronic Components and Technology Conference (ECTC)(2017)
摘要
This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500°C on the oscillators and the oscillator fundamental frequency changed by only 1%. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 % change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500°C. The pressure sensor system sensitivity was 0.113 kHz/psi at 25°C and 0.026 kHz/psi at 500°C.
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关键词
Silicon carbide,ring oscillators,high temperature,SiCN capacitive pressure sensor
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