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Comparison of Key Fine-Line BEOL Metallization Schemes for Beyond 7 Nm Node

T. Nogami,X. Zhang,J. Kelly,B. Briggs,H. You,R. Patlolla,H. Huang,P. McLaughlin,J. Lee,H. Shobha,S. Nguyen, S. DeVries,J. Demarest,G. Lian,J. Li,J. Maniscalco,P. Bhosale,X. Lin,B. Peethala,N. Lanzillo,T. Kane,C. C. Yang,K. Motoyama,D. Sil,T. Spooner,D. Canaperi,T. Standaert,S. Lian,A. Grill,D. Edelstein,V. Paruchuri

2017 Symposium on VLSI Technology（2017）

引用 33|浏览59
关键词
EM reliability,barrier-less Co wires,barrier-less Ru wires,Cu fine wires,through-cobalt self-forming barrier,TaN-Ru barrier,line resistance,key fine-line BEOL metallization schemes,size 7 nm,TaN-Ru,Cu,Co
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