Single Photon Counting Spatial Uniformity of 4H-SiC APD Characterized by SNOM-Based Mapping System
IEEE Photonics Technology Letters(2017)
Abstract
In this letter, a mapping system based on a scanning near field optical microscope is built to characterize the single photon counting spatial uniformity of single photon avalanche photodiodes (SPAD), which is important for device physics study and process optimization. The system comprises of a passive quenching circuit module and a mapping module, which are used to record single photon count (SP...
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Key words
Photonics,Silicon carbide,Avalanche photodiodes,Dark current,Photoconductivity,Metals,Electric breakdown
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