Packaging And Integration Of Dbc-Based Sic Hybrid Power Module In 379w/In(3) Dc/Dc Converter

2017 IEEE 3RD INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE AND ECCE ASIA (IFEEC 2017-ECCE ASIA)(2017)

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Abstract
A new DBC-based hybrid packaging and integration method is proposed in this paper. A multilayer power module is formed by a direct-bond-copper (DBC) and a window cutting printed circuit board (PCB). The SiC chips and PCB are placed and soldering on the DBC. Al bonding wires are used for connecting the chips and the PCB. A full SiC half-bridge power module is designed and fabricated in compact size. The parasitic inductance of power loop is only 3.38 nH. The passive device and gate drive circuit can be easily integrated on the PCB. Based on the idea, a highly integrated 2.5kW 300 kHz TCM synchronous rectification (SR) is designed. The power density achieves 379 W/ in3 and maximum efficiency reaches 98.4%.
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Key words
high power density, hybrid packaging module, wide band gap semiconductor, TCM
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