Leakage current analysis using high resistivity Silicon gated diodes for PIN detectors application

Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on high resistivity silicon substrates are fabricated and tested to analyses the reverse leakage current for silicon PIN detectors application. It is concluded that the contribution of the generation current in the main junction depletion region is more significant in the ultra-thick structures, while the contribution of the generation current generated at the silicon-oxide interface is more evident in the ultra-thin structures.