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Sige Finfet for Practical Logic Libraries by Mitigating Local Layout Effect

2017 SYMPOSIUM ON VLSI TECHNOLOGY(2017)

引用 9|浏览108
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SiGe FinFET insertion,fin cut process,channel strain relaxation,reliability benefit,DC performance,epitaxial defectivity control,local layout effect mitigation,logic libraries,SiGe CMOS FinFET,size 10 nm,SiGe
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