Sige Finfet for Practical Logic Libraries by Mitigating Local Layout Effect
2017 SYMPOSIUM ON VLSI TECHNOLOGY(2017)
关键词
SiGe FinFET insertion,fin cut process,channel strain relaxation,reliability benefit,DC performance,epitaxial defectivity control,local layout effect mitigation,logic libraries,SiGe CMOS FinFET,size 10 nm,SiGe
AI 理解论文
溯源树
样例

生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要