Resistance Control Of Transition Metal Oxide Resistive Memory (Tmo Reram)

Hidden in the widely accepted filamentary conduction mechanism for TMO ReRAM is that only a few atoms/vacancy defects control the resistance, thus these devices are intrinsically vulnerable to statistical fluctuation. Experimental results show that individual cells behave randomly and programming outcome for any single cell is unpredictable. Statistically, however, the cells in a memory array follow the Gaussian distribution and are well-behaved. Based on this insight several writing approaches, including a constant-pulse programming algorithm, which promise to improve the operation efficiency as well as product reliability are discussed.