A Study on Practically Unlimited Endurance of STT-MRAM

Magnetic tunnel junctions integrated for spin-transfer torque magnetoresistive random-access memory are by far the only known solid-state memory element that can realize a combination of fast read/write speed and high endurance. This paper presents a comprehensive validation of high endurance of deeply scaled perpendicular magnetic tunnel junctions (pMTJs) in light of various potential spin-transf...