Recent Achievements in Sub-10 nm DSA Lithography for Line/Space Patterning

Silicon-containing and modified PS-b-PMMA high-chi block copolymers materials were produced to achieve lamellar mesostructure as low as 14 nm intrinsic period (L-0) and ordered by graphoepitaxy or chemoepitaxy processes. Line Edge Roughness (LER) measurements of 2.5 nm (3 sigma) can be extracted from CD-SEM pictures of poly (1,1-dimethyl silacyclobutane)b-styrene) after etching step. Materials integrations on a 300 mm track process are highlighted. In fingerprint, new BCPs LWR L/S values are 1.5/1.1 nm in comparison to a graphoepitaxy flow where the LWR L/S values are 2.0/1.1 nm. Alternative methods to create high-resolution guiding patterns for directed self-assembly of block co-polymers and the scale-up to obtain industrial BCPs meeting electronic requirement are also reported.