Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

This paper demonstrates and investigates the time-dependent vertical breakdown of GaN-on-Si power transistors. The study is based on electrical characterization, dc stress tests and electroluminescence measurements. We demonstrate the following original results: 1) when submitted to two-terminal (drain-to-substrate) stress, the AlGaN/GaN transistors show a time-dependent degradation process, which...