New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode

Feng Liang,Degang Zhao,Desheng Jiang,Zongshun Liu,Jianjun Zhu,Ping Chen,Jing Yang,Wei Liu,Xiang Li,Shuangtao Liu,Yao Xing, Liqun Zhang,Heng Long, Mo Li

Optics & Laser Technology（2017）

引用 8|浏览14

暂无评分

摘要

•One new InGaN-based laser structure is proposed.•U-InGaN layer is designed as the upper wave guide located after the LQB.•Threshold current and output power has been improved dramatically.•There is a better optical field distribution and blockage of electron leakage.

查看译文

关键词

InGaN-based laser,uInGaN upper wave guide

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要