A dual core power combining digital power amplifier for 802.11b/g/n with +26.8dBm linear output power in 28nm CMOS

2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)(2017)

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摘要
This paper presents a digital power amplifier with two cores that are power combined for a Psat of +32.5dBm. Assisted by an on-chip digital pre-distortion, a transmitted output power of +26.8dBm for 802.11g 54 Mbps 64-QAM is achieved. This is the highest reported linear output power for a digital power amplifier designed for 802.11b/g/n applications in bulk 28nm CMOS. A total area of 0.36mm 2 is used for the power amplifier cores and combiner. Drawing off of a 3.3V supply, this power amplifier has a drain efficiency of 21.2% at the maximum linear output power.
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关键词
power amplifiers,power combining,digital pre-distortion,WLAN,OFDM,CMOS integrated circuits
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