Statistical Deviations From the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs

IEEE Transactions on Nuclear Science(2017)

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摘要
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bit flip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where ...
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关键词
Electronic mail,Computer architecture,Microprocessors,Random access memory,Monte Carlo methods,Error correction codes,Voltage control
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