GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

GaN-based high electron mobility transistors (HEMTs) were fabricated on 200-mm silicon-on-insulator (SOI) substrates possessing multiple crystal orientations. These SOI substrates have the Si (100)-SiO2-Si (111) structure, which allows Si (111) to be exposed below the buried oxide to enable GaN epitaxial growth adjacent to Si (100). The current collapse in GaN HEMTs of <; 150 × 150 μm2 patterns is...