Electro-Thermal Annealing Method for Recovery of Cyclic Bending Stress in Flexible a-IGZO TFTs
IEEE Transactions on Electron Devices(2017)
摘要
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those fabricated on glass substrates with relatively high heat treatments is inevitable. To solve these problems, a local...
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关键词
Stress,Annealing,Substrates,Thin film transistors,Ions,Reliability,Glass
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