Three dimensional reconstruction of InGaN nanodisks in GaN nanowires: Improvement of the nanowire sample preparation to avoid missing wedge effects
Journal of Crystal Growth（2017）
Abstract
•Preparation of single InGaN/GaN nanowires for STEM tomography.•The special sample geometry allows tilt of ±90° in the TEM.•Missing wedge effects can be reduced significantly.•The reconstructed data reveal a split of the InGaN nanodisks.
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Key words
A1. Nanowire,A1. STEM tomography,B2. InGaN nanodisks,A1. FIB lift-out,A1. Missing wedge
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