Nano-structure-controlled very low resistivity Cu wires formed by high purity electrolyte and optimized additives
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)(2017)
摘要
Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established the new manufacturing process utilizing very high-purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires with resistivity 50% lower than that of wires made by a conventional process. We also have ascertained the reason for getting very low resistivity Cu wires by STEM analyses and first-principle simulation.
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关键词
High Purity Electrolyte,Optimized Additives,Nano-Structure Controlled Cu Wire,Very Low Resistivity
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