Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

M. Iwinska,R. Piotrzkowski,E. Litwin-Staszewska,V. Yu. Ivanov,H. Teisseyre,M. Amilusik,B. Lucznik,M. Fijalkowski,T. Sochacki,N. Takekawa,H. Murakami,M. Bockowski

Journal of Crystal Growth（2017）

引用 14|浏览43

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摘要

•Highly resistive HVPE-GaN is presented.•GaN co-doped with Fe and Mn was crystallized.•High-temperature electrical measurements revealed n-type conductivity.•Determined activation energy of 1.8eV is related to presence of Mn in crystals.

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关键词

Characterization (A1),Doping (A1),Hydride vapor phase epitaxy (A3),Nitrides (B1),Semiconducting III-V materials (B1)

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