Bi-Enhanced N Incorporation In Gaasnbi Alloys

We have examined the influence of bismuth (Bi) and nitrogen (N) fluxes on N and Bi incorporation during molecular-beam epitaxy of GaAs1-x-yNxBiy alloys. The incorporation of Bi is found to be independent of N flux, while the total N incorporation and the fraction of N atoms occupying nonsubstitutional lattice sites increase with increasing Bi flux. A comparison of channeling nuclear reaction analysis along the [100], [110], and [111] directions with Monte Carlo-Molecular Dynamics simulations indicates that the non-substitutional N primarily incorporate as (N-As)(As) interstitial complexes. We discuss the influence of Bi adatoms on the formation of arsenicterminated [110]-oriented step-edges and the resulting enhancement in total N incorporation via the formation of additional (N-As)(As). Published by AIP Publishing.