Performance Evaluation of Pass-Transistor-based Circuits Using Monolayer and Bilayer 2-D Transition Metal Dichalcogenide (TMD) MOSFETs for 5.9nm Node
2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2017）
关键词
performance evaluation,pass-transistor-based circuits,monolayer 2D transition metal dichalcogenide MOSFET,bilayer 2D transition metal dichalcogenide MOSFET,2D TMD MOSFET,pass-transistor logic circuits,PTL circuits,ITRS 2028 node,performance degradation,single pass-transistor based circuits,bilayer TMD device mobility,size 5.9 nm
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