Nanoscale III-V on Si-based junctionless tunnel transistor for EHF band applications
JOURNAL OF SEMICONDUCTORS(2017)
摘要
A single gate III-V junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation. This device has a thin uniformly n-type doped channel of GaSb i.e. gallium antimonide which is grown epitaxially over silicon substrate. The DC performance parameters such as I-ON, I-ON/I-OFF, average and point subthreshold slope as well as device parameters for analog applications viz. transconductance gm, transconductance generation efficiency g(m)/I-D, various capacitances and the unity gain frequency f(T) are studied using a device simulator. Along with examining its endurance to short channel effects, the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET). The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.
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关键词
single gate junctionless tunnel field effect transistor (SG JL-TFET),gallium antimonide,band-to-band tunnelling,sub-threshold slope (SS)
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