Growth and structural properties of silicon on Ag films prepared by 40.68 MHz very-high-frequency magnetron sputtering

The growth of silicon on Ag films via 40.68 MHz very-high-frequency (VHF) magnetron sputtering was investigated. The energy distribution and flux density of the ions on the substrate were also measured. The results showed that 40.68 MHz magnetron sputtering can produce ions with higher energy and lower flux density. The impact of these ions onto the grown surface promotes the growth of silicon, which is related to the crystalline nature and microstructure of the underlayer of the Ag films, and there is large particle growth of silicon on Ag films with a preferred orientation of (111), and two-dimensional growth of silicon on Ag films with a better face-centered cubic structure.