Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)(2016)
摘要
This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1x10
20
cm
-3
Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)x10
-6
Ωcm
2
.
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关键词
p-type 4H-SiC,Ni-Ti-Al ohmic contacts,specific contact resistance
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