1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage
Materials Science Forum(2016)
Abstract
A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low R
onA
was sustained as V
th
increases. The R
onA
values at V
G
=25 V (E
ox
=3.2 MV/cm) and V
G
=20V (E
ox
=2.5 MV/cm), respectively, for the 3mm × 3mm device were 2.4 and 2.8 mΩcm
2
with a lowest V
th
of 2.4 V, and 3.1 and 4.4 mΩcm
2
with a high V
th
of 5.9 V.
MoreTranslated text
Key words
MOSFET,Trench,UMOSFET,IE-UMOSFET,on-resistance,threshold voltage
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