Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation
APPLIED PHYSICS EXPRESS(2019)
摘要
Behaviors such as expansion and contraction of single Shockley stacking faults (1SSFs) in a 4H-SiC epitaxial layer under various ultraviolet (UV) irradiation conditions were systematically investigated. We demonstrate that the area of the 1SSF has a key role in its behavior during UV light exposure. Contraction immediately progresses after a relatively weak UV irradiation at a high-temperature. The contraction velocity gradually decreases and eventually becomes zero at a certain area, which is dependent on the UV irradiation. (C) 2019 The Japan Society of Applied Physics
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关键词
epitaxial layer,ultraviolet irradiation,faults
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