Transducer Design For Aln Lamb Wave Resonators

AlN Lamb wave resonators enjoy advanced and attractive properties for enabling the next-generation single-chip radio frequency front-end, but their moderate effective electromechanical coupling coefficient (k(eff)(2)) poses a limit to their application in filters and multiplexers. Despite the fact that the reported k(eff)(2) enhancement techniques of doped AlN thin films which are expensive and trade off the quality factor (Q), the transducer topology itself extensively impacts the k(eff)(2) value. Although an AlN cross-sectional Lame mode resonator exhibiting a k(eff)(2) of 6.34% has been demonstrated without the need for changing the piezoelectric material, a detailed study of transducer design for AlN Lamb wave resonators has not been conducted. In this work, we investigate the impact of (i) transducer configurations, (ii) electrode materials, (iii) electrode thicknesses, and (iv) interdigital transducer duty factors on the k(eff)(2) dispersive characteristics of one-port AlN Lamb wave resonators by using the finite element analysis approach. By properly designing and optimizing the transducers, the k(eff)(2) of one-port AlN Lamb wave resonators can be boosted to as high as 7.7%, showing great potential for applications of cellular frequency selection. Published by AIP Publishing.