Annealing And Lateral Migration Of Defects In Iia Diamond Created By Near-Threshold Electron Irradiation

The migration of vacancies in diamond is of considerable fundamental interest and has been widely studied previously, while the involvement of self-interstitials in diamond is less common except through centers such as 3H, 515.8 nm, 533.5 nm, and 580 nm. In this paper, the annealing and lateral migration of some interstitial-related centers in type IIa diamond are investigated by low temperature photoluminescence (PL) microscopy, and the distributions of interstitial-and vacancy-related centers are also clearly presented and discussed. Published by AIP Publishing.