Investigation on spin-on hard mask integration

Y. J. Park,Seungwook Shin,Yun-Jun Kim,Seung-Hyun Kim,Jaebum Lim,Sung Hwan Kim, Hyeonil Jung,Chung-Heon Lee, Miyeon Han,Sang-Hak Lim,Jeong Yun Yu

ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXIV（2017）

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摘要

For fine patterning, there are two possible hard mask integration schemes: quad-layer and tri-layer systems. Due to the different structures and processes between quad-and tri-layer systems, each system needs specific chemical and physical properties of the hard mask. In this paper, we report the properties of the carbon-based spin-on hard mask (C-SOH) candidates for various hard mask integrations.

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关键词

carbon-based spin-on hard mask,tri-layer,quad-layer

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