Performance and Stability Benchmarking of Monolithic 3-D Logic Circuits and Sram Cells with Monolayer and Few-Layer Transition Metal Dichalcogenide Mosfets
IEEE TRANSACTIONS ON ELECTRON DEVICES（2017）
关键词
2-D materials,logic circuits,monolithic 3-D integration,SRAM cells,transition metal dichalcogenide (TMD)
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