Probing kinetically excited hot electrons using Schottky diodes

Hot electron generation was measured under the impact of energetic Ar and Rb ions on Ag thin film Schottky diodes. The energy-and angular-dependence of the current measured at the backside of the device due to ion bombardment at the frontside is reported. A sharp upturn in the energy dependent yield is consistent with a kinetic emission model for electronic excitations utilizing the device Schottky barrier as determined from current-voltage characteristics. Backside currents measured for ion incident angles of +/-30 degrees are strongly peaked about 0 degrees (normal incidence) and resemble results seen in other contexts, e.g., ballistic electron emission microscopy. Accounting for the increased transport distance for excited charges at non-normal incidence, the angular results are consistent with the accepted mean free path for electrons in Ag films. (C) 2017 American Vacuum Society.