Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid

A remarkable improvement of cycling endurance was achieved by the addition of a trace amount of an ionic liquid ([bmim][Tf2N]) containing Cu(Tf2N)(2) to the HfO2 layer of a conducting-bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure. The improvement was brought about by the significant improvement of the dispersion of a set voltage and the suppression of the generation and migration of oxygen vacancies owing to the smooth diffusion of Cu ions in ionic liquids. (C) 2017 The Japan Society of Applied Physics