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Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

Miao-Rong Zhang,Fei Hou,Zu-Gang Wang,Shao-Hui Zhang,Ge-Bo Pan

Applied Surface Science（2017）

Cited 28|Views4
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Abstract
GaN surface was etched by 0.3M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field.
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Key words
Gallium nitride,EDTA-2Na,Photoelectrochemical etching,Complexation dissolution mechanism
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