Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism
Applied Surface Science(2017)
Abstract
GaN surface was etched by 0.3M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field.
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Key words
Gallium nitride,EDTA-2Na,Photoelectrochemical etching,Complexation dissolution mechanism
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