Si CMOS Image-Sensors Designed With Hydrogen-Ion Implantation Induced Nanocavities for Enhancing Output Voltage Sensing Margin via Proximity Gettering

Si CMOS image-sensor (CIS) cells were designed by implementing proximity relaxation gettering sites of hydrogen-ion implantation-induced nanocavities (20-35 nm in diameter) underneath Si photodiode regions to enhance the sensing margin of output voltage in CIS cells. They enabled almost no degradation in the output voltage sensing margin, although ~1014 cm-2 of Fe, Cu, Ni, and Co contaminants were...