Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions

R. Steinberger,C.E. Celedón,B. Bruckner,D. Roth,J. Duchoslav,M. Arndt,P. Kürnsteiner,T. Steck,J. Faderl,C.K. Riener,G. Angeli,P. Bauer,David Stifter

Applied Surface Science（2017）

Cited 13|Views21

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Abstract

•Investigation on the impact of residual gas prevailing in UHV chambers.•For some metals detrimental oxygen uptake could be observed within shortest time.•Totally different behavior was found: no changes, solely adsorption and oxidation.•The UHV residual gas may severely corrupt results obtained from depth profiling.•A well-considered data acquisition sequence is the key for reliable depth profiles.

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Key words

Metal surfaces,XPS,AES,LEIS,Oxygen accumulation,Residual gas

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